2SB709A_0712 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | 2SB709A_0712 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB709A
FEATURES
Pb
Lead-free
z
High forward current transfer ratio hFE.
Mini type package, allowing downsizing
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
z
APPLICATIONS
SOT-23
z
For general amplification complementary to 2SD601A
ORDERING INFORMATION
Type No.
2SB709A
Marking
Package Code
SOT-23
BQ1,BR1,BS1
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
-45
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
ICP
-45
V
-7
V
Peak collector Current
Collector Current
-200
-100
200
mA
mA
mW
℃
IC
Collector Dissipation
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB709A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-10μA,IE=0
-45
V
V
V
V(BR)CEO
V(BR)EBO
IC=-2mA,IB=0
-45
-7
IE=-10μA,IC=0
ICBO
ICEO
VCB=-20V,IE=0
VEB=-10V,IC=0
-0.1
μA
Collector cut-off current
-100 μA
DC current gain
hFE
VCE=-10V,IC=-2mA
160
460
Collector-emitter saturation voltage
IC=-100mA, IB=-10mA
VCE(sat)
-0.3
80
-0.5
V
VCB=-10V, IE=-1mA
f=200MHz
Transition frequency
fT
MHz
Collector output capacitance
CLASSIFICATION OF hFE(1)
VCB=-10V,IE=0,f=1MHz
Cob
2.7
pF
Range
160-260
210-340
BR1
290-460
BS1
Marking
BQ1
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB709A
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB709A
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
G
H
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2SB709A
3000/Tape&Reel
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
4
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